郭炜，项目研究员，博士生导师。本科毕业于上海交通大学，博士毕业于美国北卡罗来纳州立大学宽禁带实验室，师从宽禁带半导体领域知名教授Zlatko Sitar。博士毕业后加入全球最大的半导体设备供应商应用材料有限公司任研发工程师，2016年加入中科院宁波材料所，先后任“特聘青年研究员”、春蕾副研究员、项目研究员。长期从事第三代半导体（III族氮化物）材料与器件的研究。主持了国家自然科学基金联合基金、面上、青年基金、科技部重点研发计划（子课题）、中科院科研仪器设备研制项目、浙江省杰青、宁波市“科技创新2025”重大专项等课题。以第一作者/通讯作者在Adv. Func. Mater., Optica, Opt.Lett., Appl. Phys. Lett., Appl. Phys. Exp.等光学、物理权威期刊上发表论文30余篇，合作论文近40篇。引用1500余次(Google Scholar)，h因子21。申请中国发明专利20余项，授权10项。应邀在多个国际会议和学术机构作邀请报告。郭炜研究员是中科院青年创新促进会会员，并获得了宁波市“3315 创新团队计划”人才称号、浙江省“钱江人才”称号，担任《光子学报》青年编委。
研究方向
1.氮化物宽禁带半导体材料
2.AlGaN基紫外光电子器件
3.GaN HEMT及新型电力电子器件
论文专利
1.Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation, Y Dai, W Guo*, L Chen, H Xu, F AlQatari,C Guo, X Peng, K Tang, C Liao, X Li*, and J Ye*, Applied Physics Letters, 121, 012104 (2022)
2.Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters, M Cui#, C Guo#, Z Yang, L Chen, Y Dai, H Xu, W Guo*, and J Ye*, Journal of Applied Physics, 131, 045301 (2022)
3.Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations, X Peng#, J Sun#, H Liu, L Li, Q K Wang, L Wu, W Guo*, F P Meng*, L Chen, F Huang, and J C Ye*, Journal of Semiconductors, 43, 022801 (2022)
4.Significantly boosted external quantum efficiency of AlGaN-based DUV-LED utilizing thermal annealed Ni/Al reflective electrodes, X Peng, W Guo*, H Xu, L Chen, Z Yang, L Xu, J Liu, K Tang, C Guo, L Yan, S Guo, C Chen and J Ye*, Applied Physics Express. 14, 072005 (2021)
5.Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains, C Guo, W Guo,* Y Dai, H Xu, L Chen, D Wang, X Peng, K Tang, H Sun, J Ye, Optics Letters, 46, 3203 (2021)
6.Efficient Carrier Recombination in InGaN Pyramidal µ-LEDs Obtained through Selective Area Growth，J Jiang, H Xu, L Chen, L Yan, J Hoo, S Guo, Y Zeng, W Guo*, and J Ye, Photonics, 8, 157 (2021).
7.Annihilation and Regeneration of Defects in (1122) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth. L Chen, W Lin, H Chen, H Xu, C Guo, Z Liu, J Yan, J Sun, H Liu, J Wu, W Guo,* J Kang,* and J Ye*, Crystal Growth & Design, 21, 2911 (2021)
8.Direct demonstration of carrier distribution and recombination within step-bunched UV LED, H Xu, J Jiang, L Chen, J Hoo, L Yan, S Guo, C Shen, Y Wei, H Shao, Z Zhang, W Guo*, J Ye*, Photonics Research, 9, 764 (2021)
9.Evidence of Carrier Localization in AlGaN/GaN based Ultraviolet Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging, M Cui, W Guo*, H Xu, J Jiang, L Chen, S Mitra, I Roqan, H Jiang, X Li, and J Ye*, Phys. Status Solidi RRL 2100035 (2021)
10.Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer, L Chen, Y Dai, L Li, J Jiang, H Xu, K Li, T Ng, M Cui, W Guo*, H Sun*, and J Ye*, Journal of Alloys and Compounds, 861, 157589 (2021)
11.Polarity control and fabrication of lateral-polarity-structure of III-nitride thin films and devices: progress and prospect, W Guo, H Xu, L Chen, H Yu, J Jiang, M Sheikhi, L Li, Y Dai, M Cui, H Sun, and J Ye, Journal of Physics D: Applied Physics, 53, 483002 (2020)
12.Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer. M Cui, Y Gao, S Hang, X Qiu, Y Zhang, Z Zhang*, W Guo*, J Ye*, Superlattices and Microstructures, 146, 106654 (2020)
13.Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters, H Xu, J Jiang, Y Dai, M Cui, K Li, X Ge, J Hoo, L Yan, S Guo, J Ning, H Sun, B Sarkar, W Guo*, and J Ye* ACS Applied Nano Materials 3, 5335 (2020)
14.Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains, W Guo, L Chen, H Xu, Y Qian, M Sheikhi, J Hoo, S Guo, L Xu, J Liu, F Alqatari, X Li, K He, Z Feng, and J Ye*, Photonics Research, 8, 812 (2020)
15.Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs, L Li#, M Cui#, H Shao, Y Dai, L Chen, Z Zhang, J Hoo, S Guo, W Lan, L Cao, H Xu, W Guo*, J Ye, Optics Letters, 45, 2427 (2020)
16.On the Luminescence Properties and Surface Passivation Mechanism of III- and N-Polar Nanopillar Ultraviolet Multiple-Quantum-Well Light Emitting Diodes, M Sheikhi, Y Dai, M Cui, L Li, J Liu, W Lan, R Jiang, W Guo*, K Chee*, and J Ye*, Micromachines, 11,572 (2020)
17.Mechanism of improved luminescence intensity of Ultraviolet Light Emitting Diodes (UV-LEDs) under thermal and chemical treatments. M Sheikhi, W Guo*, Y Dai, M Cui, J Hoo, S Guo, L Xu, J Liu, J Ye*, IEEE Photonics Journal, 11, 1 (2019)
18.Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate, H Sun, S Mitra, R Subedi, Y Zhang, W Guo*, J Ye, M Shakfa, T Ng, B Ooi, I Roqan,* Z Zhang, J Dai,* C Chen, and S Long, Advanced Functional Materials, 29, 1905445 (2019)
19.Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures, W Guo, S Mitra, J Jiang, H Xu, M Sheikhi, H Sun, K Tian, Z Zhang, H Jiang, I Roqan, X Li*, Ji Ye*, Optica, 6, 1058 (2019)
20.Strain modulated nanostructure patterned AlGaN-based deep ultraviolet multiple-quantum-wells for polarization control and light extraction efficiency enhancement, H Xu, H Long, J Jiang, M Sheikhi, L Li, W Guo*, J Dai, C Chen, J Ye*, Nanotechnology, 30, 435202 (2019)
21.Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate, J Jiang, H Xu, M Sheikhi, L Li, Z Yang, J Hoo, S Guo, Y Zeng, W Guo*, J Ye*, Optics Express, 27, 16195 (2019)
22.Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates, H Xu, J Jiang, M Sheikhi, Z Chen, J Hoo, S Guo, W Guo*, H Sun*, J Ye*, Superlattices and Microstructures129, 20 (2019)
23.GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes, M Sheikhi, H Xu, J Jiang, S Wu, X Yang, Z Yang, M Liao, W Guo,* and J Ye*, Physica Status Solidi A: Applications and Materials Sciences, 216, 1800684 (2018)
24.Tuning photonic crystal fabrication by nanosphere lithography and surface treatment of AlGaN-based ultraviolet light-emitting diodes, K Chee†, W Guo†, R Wang, Y Wang, Y Chen and J Ye, Materials & Design, 160, 661 (2018)
25.Performance enhancement of ultraviolet light emitting diode incorporating Al nanohole arrays, J Jiang, W Guo*, H Xu, Z Yang, S Guo, W Xie, K Chee, Y Zeng and J Ye*, Nanotechnology, 29, 45LT01 (2018)
26.Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence, W Guo, H Sun, B Torre, J Li, M Sheikhi, J Jiang, H Li, S Guo, K Li, R Lin, A Giugni, E Di-Fabrizio, X Li*, J Ye*, Advanced Functional Materials, 28, 1802395 (2018)
27.Comparative study on luminescence extraction strategies of LED by large-scale fabrication of nanopillar and nanohole structures, W Guo, J Li, M Sheikhi, J Jiang, Z Yang, H Li, S Guo, J Sheng, J Sun, B Bo, J Ye*, Journal of Physics D: Applied Physics, 51, 24LT01 (2018)
28.徐厚强，蒋洁安，郭炜，叶继春, 一种III族氮化物半导体发光器件台面刻蚀方法，专利号：ZL201811541251.5
29.莫海波, 郭炜，蒋洁安，高平奇，叶继春，AlGaN 基紫外LED 器件及其制备方法与应用，专利号：ZL201810432320.2
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